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| MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * Epitaxial Planar Die Construction Complementary PNP Types Available (MMBTA55 / MMBTA56) Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW B E D G H K J L M C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data * * * * * * B Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram MMBTA05 Marking: K1G, K1H, R1H MMBTA06 Marking: K1G, R1G Weight: 0.008 grams (approx.) E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBTA05 60 60 4.0 500 350 357 -55 to +150 MMBTA06 80 80 Unit V V V mA mW K/W C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product @ TA = 25C unless otherwise specified Symbol MMBTA05 MMBTA06 MMBTA05 MMBTA06 MMBTA05 MMBTA06 MMBTA05 MMBTA06 Min 60 80 60 80 4.0 3/4 3/4 Max Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES 3/4 3/4 3/4 100 100 V V V nA nA IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, IB = 10mA IC = 100mA, VCE = 1.0V VCE = 2.0V, IC = 10mA, f = 100MHz hFE VCE(SAT) VBE(SAT) 100 3/4 3/4 3/4 0.25 1.2 3/4 V V fT 100 3/4 MHz Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. DS30037 Rev. C-2 1 of 2 MMBTA05 / MMBTA06 1000 TA = +125C 350 VCE = 1V PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature hFE, PULSED CURRENT GAIN TA = -40C 100 TA = +25C 10 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Typical Pulsed Current Gain vs. Collector Current 2.0 VCE, COLLECTOR EMITTER VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 IC = 1mA IC = 100mA IC = 10mA IC = 30mA 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region 10 ICBO, COLLECTOR-BASE CURRENT (nA) VCB = 80V 1 0.1 0.01 25 50 75 100 125 TA, AMBIENT TEMPERATURE (C) Fig. 4 Typical Collector-Cutoff Current vs. Ambient Temperature DS30037 Rev. C-2 2 of 2 MMBTA05 / MMBTA06 |
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